MP18021

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100V High Frequency, N-MOSFET Half-Bridge Gate Driver with 1ns Matching Delay



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产品描述

The MP18021 is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with less than 5ns in time delay. Under voltage lock-out on both high side and low side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.

产品特性

  • Drives N-channel MOSFET half bridge
  • 100V VBST voltage range
  • On-chip bootstrap diode
  • Typical 16ns propagation delay time
  • Less than 5ns gate drive matching
  • Drive 1nF load with 12ns/9ns rise/fall times with 12V VDD
  • TTL compatible input
  • Less than 150A quiescent current
  • UVLO for both high side and low side
  • In SOIC8 EPAD Package

技术参数

  • GradeCatalog
  • PackageQFN-8 (3x3), SOIC-8 EP
  • Bootstrap Supply (max) (V)100
  • trise (ns)12
  • Turn-On Delay (ns)16
  • tfall (ns)9
  • Turn-Off Delay (ns)16
  • Peak Ipull-up (A)1.5
  • Peak Ipull-down (A)2.5
  • Vin (max) (V)16
  • 最小输入电压9

100V, High Frequency Half-Bridge Gate Driver EV Board

This is EV board documentation for MP18021A. The MP18021A is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both high side and low side supplies force their outputs low in case of insufficient supply.  The integrated bootstrap diode reduces external component count.

This demo board is configured to a buck converter. INH and INL are independent signals of each other. For simplicity, the user only need to supply a PWM signal to this demo board and the on-board circuitry will generate INH and INL signals with proper dead time. In a real system, the controller will have to take care of dead time adjustment.

¥ 178.75 + tax


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